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In-Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2021-06-29 , DOI: 10.1002/pssr.202100208
Nuo Xu 1 , Taegyun Park 2 , Kyung Jean Yoon 3 , Cheol Seong Hwang 2
Affiliation  

Combining Boolean logic and nonvolatile memory functions, memristor-based stateful logic circuits can minimize data movement during the computing process to achieve futuristic in-memory computing. This may solve the problem of the von Neumann bottleneck in the current computing architecture. Herein, the recent developments in memristor-based stateful logic computation are discussed from several perspectives, including the device, circuit, operational principles, and applications. Stateful logic gates correspond to in-memory logic gates, with the inputs and outputs having identical physical entities, such as resistance. The developments in stateful logic primitive gates reported in the past decade are summarized. The influential factors in their actual implementation for stateful logic computation are also discussed. Then, methods for allocating the logic gates into the crossbar array are explained, which are for implementing the complex computing instances in the crossbar array. Finally, several data-intensive applications achieved using the in-memory computing method are discussed for the practical application of stateful logic in future computing systems.

中文翻译:

使用忆阻器的内存状态逻辑计算:门、计算和应用

结合布尔逻辑和非易失性存储器功能,基于忆阻器的状态逻辑电路可以最大限度地减少计算过程中的数据移动,实现未来的内存计算。这可能会解决当前计算架构中冯诺依曼瓶颈的问题。在此,从器件、电路、工作原理和应用等多个角度讨论了基于忆阻器的状态逻辑计算的最新进展。状态逻辑门对应于内存中的逻辑门,输入和输出具有相同的物理实体,例如电阻。总结了过去十年报告的有状态逻辑原语门的发展。还讨论了它们在状态逻辑计算的实际实现中的影响因素。然后,解释了将逻辑门分配到纵横阵列中的方法,这些方法用于在纵横阵列中实现复杂的计算实例。最后,讨论了使用内存计算方法实现的几种数据密集型应用程序,以用于有状态逻辑在未来计算系统中的实际应用。
更新日期:2021-06-29
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