InGaAs is a potential candidate for a next-generation channel material of complementary metal-oxide-semiconductor devices based on its excellent electron mobility. In this study, the surface behaviors of the InGaAs after treatments in H₃PO₄/H₂O₂/H₂O and HNO₃/H₂O₂/H₂O mixtures were investigated and compared with that after treatment in a HCl/H₂O₂/H₂O mixture. Although the presence of Cl⁻ in an acidic solution suppressed the overall etching reaction and material loss of the InGaAs surface, Cl⁻ induced the roughening of the InGaAs surface. The smallest InGaAs/Al₂O₃ interface charge trap density was observed when the InGaAs surface was prepared in the H₃PO₄/H₂O₂/H₂O solution. It was also confirmed that the H₃PO₄/H₂O₂/H₂O-treated InGaAs surface had the highest electron mobility among the samples and the lowest interfacial defect density, such as arsenic vacancies and antisites. Finally, it was concluded that surface preparation of InGaAs with H₃PO₄/H₂O₂/H₂O effectively improved the interfacial electrical properties at the metal-oxide-InGaAs semiconductor by successfully minimizing surface roughening and the interfacial defect density compared to a well-known HCl/H₂O₂/H₂O solution process.

InGaAs 基于其优异的电子迁移率，是互补金属氧化物半导体器件的下一代沟道材料的潜在候选者。在本研究中，研究了 InGaAs 在 H ₃ PO ₄ /H ₂ O ₂ /H ₂ O 和 HNO ₃ /H ₂ O ₂ /H ₂ O 混合物中处理后的表面行为，并与在 HCl 中处理后的表面行为进行了比较。 /H ₂ O ₂ /H ₂ O混合物。尽管酸性溶液中 Cl ^-的存在抑制了 InGaAs 表面的整体蚀刻反应和材料损失，但 Cl ^-诱导 InGaAs 表面变粗糙。当在 H ₃ PO ₄ /H ₂ O ₂ /H ₂ O 溶液中制备 InGaAs 表面时，观察到最小的 InGaAs/Al ₂ O ₃界面电荷陷阱密度。还证实，H ₃ PO ₄ /H ₂ O ₂ /H ₂ O 处理的 InGaAs 表面在样品中具有最高的电子迁移率和最低的界面缺陷密度，例如砷空位和反位点。最后得出结论，InGaAs 表面制备与 H ₃ PO ₄ /H ₂Ø ₂ / H ₂ ö通过成功地减少表面粗糙化，并与一个公知的HCl / H的界面缺陷密度有效地提高在金属-氧化物-半导体的InGaAs的界面的电性能₂ ö ₂ / H ₂ O解决方案过程。