In this paper, we have investigated the channel temperature and thermal sensitivity for a 0.15 μm gate GaN HEMT at nine different temperatures from 233 K to 423 K. The estimation of channel temperature has been accomplished by means of DC and pulse measurement and it was later well verified with modelled data. Using that measured and theoretical data, the thermal resistance for the device is also estimated and compared with those published in open literature. The investigation was further extended to study the thermal-sensitivity of the DC and small signal parameters by means of on-wafer measurement in relation to room temperature. Temperature has a variety of effects based on the selected operating condition, the bias point is selected to achieve highest gain in the case of intrinsic parameters. As will be shown, different trends are observed for the extrinsic and intrinsic parameters but the temperature has a greater impact on the resistances.

在本文中，我们研究了 0.15 μm 栅极 GaN HEMT 在 233 K 到 423 K 的九种不同温度下的通道温度和热灵敏度。通道温度的估计是通过直流和脉冲测量完成的，后来用建模数据得到了很好的验证。使用这些测量数据和理论数据，还可以估计器件的热阻，并与公开文献中公布的热阻进行比较。该研究进一步扩展到通过与室温相关的晶圆上测量来研究直流和小信号参数的热敏性。温度对选定的工作条件有多种影响，选择偏置点以在固有参数的情况下实现最高增益。正如将要展示的那样，