MXenes are an emerging family of transition-metal carbides, nitrides, and carbonitrides that are promising for a variety of applications, including energy storage, gas sensors, and electromagnetic interference shielding. A recent report on a very high breakdown current density of ∼1.2 × 10⁸ A cm^–2 in Ti₃C₂T_x further extended the list of potential applications of MXenes to miniaturized on-chip interconnects. In this study, we investigated another promising member of the MXene family, Nb₄C₃T_x, and found that it also has a very high breakdown current density of ∼1.1 × 10⁸ A cm^–2, which is comparable to that of Ti₃C₂T_x and other highly conductive two-dimensional materials, such as graphene. The measurements were performed on electronic devices based on individual monolayer flakes of Nb₄C₃T_x, which were tested at gradually increasing voltages until the electrical breakdown was observed. The morphology of Nb₄C₃T_x devices after the breakdown was studied by microscopic techniques. The high breakdown current densities of Ti₃C₂T_x and Nb₄C₃T_x suggest that other members of the large MXene family likely possess this property and could be employed in applications utilizing their high current-carrying capacity.

中文翻译：

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单层 Nb4C3Tx MXene 中的高击穿电流密度

MXenes 是一种新兴的过渡金属碳化物、氮化物和碳氮化物家族，有望用于各种应用，包括储能、气体传感器和电磁干扰屏蔽。最近关于Ti ₃ C ₂ T _x中~1.2 × 10 ⁸ A cm ^{–2 的}极高击穿电流密度的报告进一步将 MXenes 的潜在应用范围扩展到小型化片上互连。在这项研究中，我们研究了 MXene 家族的另一个有前途的成员 Nb ₄ C ₃ T _x，发现它也具有非常高的击穿电流密度，约为 1.1 × 10 ⁸ A cm ^–2，这可与 Ti ₃ C ₂ T _x和其他高导电二维材料（如石墨烯）相媲美。测量是在基于单个 Nb ₄ C ₃ T _x单层薄片的电子设备上进行的，在逐渐增加的电压下进行测试，直到观察到电击穿。通过显微技术研究击穿后Nb ₄ C ₃ T _x器件的形态。Ti ₃ C ₂ T _x和 Nb ₄ C ₃ T _x的高击穿电流密度 表明大型 MXene 家族的其他成员可能具有这种特性，并且可以利用其高载流能力用于应用中。