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Global strain-induced scalar potential in graphene devices
Communications Physics ( IF 5.5 ) Pub Date : 2021-06-29 , DOI: 10.1038/s42005-021-00651-y
Lujun Wang , Andreas Baumgartner , Péter Makk , Simon Zihlmann , Blesson Sam Varghese , David I. Indolese , Kenji Watanabe , Takashi Taniguchi , Christian Schönenberger

By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.



中文翻译:

石墨烯器件中的全局应变诱导标量势

通过机械扭曲晶格,可以设计材料的电子和光学特性。在石墨烯中,这种扭曲的主要影响之一是狄拉克点的能量转移,通常被描述为标量势。我们展示了如何在整个电子设备上系统地产生这样的标量势,以及如何在传输实验中检测到石墨烯功函数的变化。结合拉曼光谱,我们获得了与最近的理论估计一致的特征标量势。由于石墨烯中确定性产生的应变,这一宏观尺度标量势的直接证据为通过使用外部应变来设计石墨烯和类似材料的光学和电子特性铺平了道路。

更新日期:2021-06-29
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