Improvement of light extraction efficiency of deep ultraviolet light-emitting-diodes (DUV-LEDs) was obtained by adopting a Ni/Al reflective electrode. Optical reflectivity up to 78.1% at 277nm was achieved. The enhanced reflectivity after thermal annealing was ascribed to the formation of Ni clusters embedded inside the Al matrix as revealed by the correlation between the surface morphology and chemical stoichiometry. The peak external quantum efficiency of a 277nm DUV-LED incorporating annealed Ni/Al reflective electrodes reaches 3.03%, which is 44% higher than that with conventional Ni/Au p-electrodes, revealing itself as a promising candidate in the realization of high-efficiency DUV emitters.

通过采用 Ni/Al 反射电极，提高了深紫外发光二极管 (DUV-LED) 的光提取效率。在 277nm 处实现了高达 78.1% 的光学反射率。热退火后反射率的提高归因于形成嵌入铝基体内部的 Ni 簇，如表面形态和化学计量之间的相关性所揭示的。包含退火 Ni/Al 反射电极的 277nm DUV-LED 的峰值外量子效率达到 3.03%，比传统的 Ni/Au p 电极高 44%，表明它是实现高光密度的有希望的候选者。效率 DUV 发射器。