We propose a novel circuit for the fractional-order memristive neural synaptic weighting (FMNSW). The introduced circuit is different from the majority of the previous integer-order approaches and offers important advantages. Since the concept of memristor has been generalized from the classic integer-order memristor to the fractional-order memristor (fracmemristor), a challenging theoretical problem would be whether the fracmemristor can be employed to implement the fractional-order memristive synapses or not. In this research, characteristics of the FMNSW, realized by a pulse-based fracmemristor bridge circuit, are investigated. First, the circuit configuration of the FMNSW is explained using a pulse-based fracmemristor bridge circuit. Second, the mathematical proof of the fractional-order learning capability of the FMNSW is analyzed. Finally, experimental work and analyses of the electrical characteristics of the FMNSW are presented. Strong ability of the FMNSW in explaining the cellular mechanisms that underlie learning and memory, which is superior to the traditional integer-order memristive neural synaptic weighting, is considered a major advantage for the proposed circuit.

我们提出了一种用于分数阶忆阻神经突触加权 (FMNSW) 的新型电路。引入的电路不同于之前的大多数整数阶方法，并提供了重要的优势。由于忆阻器的概念已经从经典的整数阶忆阻器推广到分数阶忆阻器（fracmemristor），因此一个具有挑战性的理论问题将是分数阶忆阻器是否可以用于实现分数阶忆阻突触。在这项研究中，研究了由基于脉冲的碎裂电阻桥电路实现的 FMNSW 的特性。首先，使用基于脉冲的碎裂电阻桥电路来解释 FMNSW 的电路配置。其次，分析了 FMNSW 的分数阶学习能力的数学证明。最后，介绍了 FMNSW 电气特性的实验工作和分析。FMNSW 在解释作为学习和记忆基础的细胞机制方面的强大能力，优于传统的整数阶忆阻神经突触加权，被认为是所提出电路的主要优势。