We investigated theoretically a waveguided EAM (Electro-Absorption Modulator) based on ISBT (Intersubband Transitions) in an In _(0.53) Ga _(0.47) As/AlAs/AlAs _(0.56) Sb _(0.44) A-CDQWs (Asymmetric Coupled Double Quantum Wells) lattice-matched to InP at telecommunication wavelength ( $\lambda =1.55~\mu \text{m}$ ) which offers ultrahigh-speed and moderate voltage swing. Likewise, the temperature dependency in the In _(0.53) Ga _(0.47) As/AlAs/AlAs _(0.56) Sb _(0.44) A-CDQWs was investigated at different temperatures from 300 K to 400 K and evidently the InP-based ISB (Intersubband) modulator offers better temperature stability (~ 0.05 nm/C) compared to the InP-based IB (Interband) modulator. The EAM investigated here is anticipated to have a RC-limited speed ( $f_{3d\,B}$ ) of ~300 GHz with insertion loss of 5.1 dB, 10 dB extinction ratio and 5.18 dB/V modulation efficiency at a peak-to-peak voltage of 2.0 V which can support a data rate of up to 600 Gbps and beyond.

中文翻译：

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电信波长下超快波导电吸收调制器的建模（λ = 1.55 μm) 基于 InGaAs/AlAs/AlAsSb 非对称耦合双量子阱晶格匹配 InP 中的子带间跃迁

我们在 In _(0.53) Ga _(0.47) As/AlAs/AlAs _(0.56) Sb _(0.44) A-CDQWs（非对称耦合双量子阱）中从理论上研究了基于 ISBT（子带间跃迁）的波导 EAM（电吸收调制器） ) 在电信波长处与 InP 晶格匹配 ( $\lambda =1.55~\mu \text{m}$ ) 提供超高速和中等电压摆幅。同样，在300 K 至 400 K 的不同温度下研究了 In _(0.53) Ga _(0.47) As/AlAs/AlAs _(0.56) Sb _(0.44) A-CDQWs的温度依赖性， 显然基于 InP 的 ISB（子带间） ) 调制器与基于 InP 的 IB（带间）调制器相比，提供更好的温度稳定性 (~ 0.05 nm/C)。预计这里研究的 EAM 具有 RC 限制的速度（ $f_{3d\,B}$ ) 约 300 GHz，插入损耗为 5.1 dB，消光比为 10 dB，调制效率为 5.18 dB/V，峰峰值电压为 2.0 V，可支持高达 600 Gbps 及更高的数据速率。