In this work, Gallium oxide (Ga₂O₃) films were deposited by RF magnetron sputtering on quartz and n-type Si (100) substrates at room temperature. The effect of annealing temperature on crystalline structure and band gap of β-Ga₂O₃ thin films were investigated in detail. X-ray diffraction revealed the formation of monoclinic polycrystalline thin films. The bandgap of the thin films was estimated to be in the range of 4.75 eV–5.15 eV. Raman spectra indicated blue and red shifts of Ga₂O₃ phonon modes in the thin films. The absorption bands at 647.05 cm⁻¹ due to vibrations of Ga–O bonds were identified through Fourier-transform infrared spectroscopy.

在这项工作中，氧化镓 (Ga ₂ O ₃ ) 薄膜在室温下通过射频磁控溅射沉积在石英和 n 型 Si (100) 衬底上。详细研究了退火温度对β-Ga ₂ O ₃薄膜晶体结构和带隙的影响。X 射线衍射揭示了单斜多晶薄膜的形成。薄膜的带隙估计在 4.75 eV-5.15 eV 的范围内。拉曼光谱表明薄膜中 Ga ₂ O ₃声子模式的蓝移和红移。由于 Ga-O 键的振动，在 647.05 cm ^-1处的吸收带通过傅里叶变换红外光谱确定。