Under optical illumination of metal–insulator-semiconductor field effect transistors with insulated gate structure (MISFETs including MOSFETs and TFTs), photo-generated electron-hole pairs (ehp’s) cause the photovoltaic effect (PVE) and the photoconductive effect (PCE) in the electrical characteristics of MISFETs. In the modeling and characterization of MISFETs under optical excitation for both optical sensing and/or electro-optical characterization of traps through photonic C-V and I-V responses, it is necessary to separate the PVE from the PCE in MISFETs. In this letter, we report the modeling and separate characterization of the PVE from the PCE in MISFETs applicable to MOSFETs and TFTs. We confirmed the proposed model and the technique through experimental results adopting the different substrate contact configurations and optical power of the device under characterization. As a result, the effective surface potential change for the PCE (V_PCE) and the effective substrate potential change for the PVE (V_PVE) could be quantitatively extracted.

在具有绝缘栅结构的金属-绝缘体-半导体场效应晶体管（MISFET，包括 MOSFET 和 TFT）的光学照射下，光生电子-空穴对（ehp's) 在 MISFET 的电气特性中引起光伏效应 (PVE) 和光电导效应 (PCE)。在通过光子 CV 和 IV 响应对陷阱进行光学传感和/或光电表征的光激发下的 MISFET 建模和表征中，有必要将 PVE 与 MISFET 中的 PCE 分开。在这封信中，我们报告了适用于 MOSFET 和 TFT 的 MISFET 中 PVE 与 PCE 的建模和单独表征。我们通过采用不同基板接触配置和表征器件的光功率的实验结果证实了所提出的模型和技术。因此，PCE 的有效表面电位变化 ( V _PCE) 和 PVE 的有效底物电位变化 ( V _PVE ) 可以定量提取。