Indium Tin Oxide (ITO) films were deposited on glass substrate using radiofrequency (RF) magnetron sputtering technique. To improve the physical characteristics of the ITO film, AlN and HfO₂ buffer layers were deposited on glass prior to the film deposition. The ITO/glass, ITO/AlN/glass and ITO/HfO₂/glass films were annealed using CO₂ laser and electrical oven heating methods. The crystallinity of the ITO film was improved due to the incorporation of AlN and HfO₂ buffer layers and also by the post-deposition annealing process. The optical transmittance of the ITO was also increased due to the presence of the buffer layers. Similarly, the annealed ITO films grown on buffer layers exhibited lower values of the sheet resistance as compared to the film deposited without buffer layers. The laser annealing technique was more found to be more effective in reducing the ITO sheet resistance.

中文翻译：

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通过 AlN 和 HfO2 缓冲层改善 ITO 薄膜的结构、光学和电气性能

使用射频 (RF) 磁控溅射技术将氧化铟锡 (ITO) 薄膜沉积在玻璃基板上。为了改善ITO薄膜的物理特性，在薄膜沉积之前将AlN和HfO ₂缓冲层沉积在玻璃上。使用CO ₂激光和电烘箱加热方法对ITO/玻璃、ITO/AlN/玻璃和ITO/HfO _{2 /玻璃膜进行退火。}由于AlN和HfO _{2的掺入提高了ITO薄膜的结晶度}缓冲层以及沉积后退火工艺。由于缓冲层的存在，ITO 的透光率也增加了。类似地，与没有缓冲层的沉积膜相比，在缓冲层上生长的退火ITO膜表现出较低的薄层电阻值。发现激光退火技术在降低 ITO 薄层电阻方面更有效。