The main focus of this framework is the preparation of CdTe nanocrystalline thin films (~120 nm) on single crystal p-Si wafers (270 μm) with Miller index (100) using thermal evaporation. Then, the In/n-CdTe/p-Si/Al solar cell was successfully fabricated. The dark I–V characteristics for the fabricated solar cell have been determined in range of 300–375 K and an applied voltage range of − 2 to 2 V. The fabricated solar cell's behavior was thoroughly explained. As a result, the important parameters for the fabricated solar cell such as the rectification ratio \({\text{RR}}\), the junction resistance \(R_{{\text{J}}}\), ideality factor of solar cell n, the shunt resistance \(R_{{{\text{sh}}}}\), the series resistance \(R_{{\text{s}}}\), the barrier height created at the interface between the CdTe thin film and the p-Si wafer \(\phi_{b}\), the energy of trap level \(E_{{\text{t}}}\) and the activation energy of carriers’s recombination in the depletion region \(\Delta E\) were determined. Finally, the Poole–Frenkel \(\beta_{{{\text{PF}}}}\) and Schottky \(\beta_{{\text{S}}}\) parameters were computed.

该框架的主要焦点是使用热蒸发在米勒指数 (100) 的单晶 p-Si 晶片 (270 μm) 上制备 CdTe 纳米晶薄膜 (~120 nm)。然后，成功制备了 In/n-CdTe/p-Si/Al 太阳能电池。制造的太阳能电池的暗 I-V 特性已确定在 300-375 K 的范围内，施加的电压范围为 - 2 至 2 V。制造的太阳能电池的行为得到了彻底的解释。因此，制造的太阳能电池的重要参数如整流比\({\text{RR}}\)，结电阻\(R_{{\text{J}}}\)，理想因子为太阳能电池n，并联电阻\(R_{{{\text{sh}}}}\)，串联电阻\(R_{{\text{s}}}\)，在 CdTe 薄膜和 p-Si 晶片之间的界面处产生的势垒高度\(\phi_{b}\)，陷阱能级的能量\( E_{{\text{t}}}\)和载流子在耗尽区复合的活化能\(\Delta E\)被确定。最后，计算了 Poole-Frenkel \(\beta_{{{\text{PF}}}}\)和 Schottky \(\beta_{{\text{S}}}\)参数。