In this paper, a wide band inductorless differential low noise amplifier (LNA) is designed and analyzed. To attain ultra-low power consumption, several g_m-enhancement techniques have been used. g_m-enhancement achieved by active negative feedback and cross coupling techniques. By several g_m-enhancement, in spite of the low intrinsic transconductance of the MOS transistor, low noise, high gain, and good linearity can be achieved. The LNA is designed in 180 nm CMOS technology and occupies a total area of 0.04 mm². It has power gain of 15.64 dB, a minimum noise figure of 4.5 dB, third-order intermodulation intercept point of − 5 dBm while provides good input matching (S₁₁ < − 10 dB) in 0.03–3 GHz. The power consumption is 0.6 mW.

在本文中，设计和分析了宽带无电感差分低噪声放大器 (LNA)。为了实现超低功耗，已经使用了几种g _m增强技术。g _m - 通过主动负反馈和交叉耦合技术实现的增强。通过几g _m增强，尽管 MOS 晶体管的本征跨导较低，但可以实现低噪声、高增益和良好的线性度。LNA 采用 180 nm CMOS 技术设计，总面积为 0.04 mm ²。它的功率增益为 15.64 dB，最小噪声系数为 4.5 dB，三阶互调截点为 − 5 dBm，同时提供良好的输入匹配（S ₁₁ < − 10 dB) 在 0.03–3 GHz。功耗为 0.6 mW。