Silicon nanowire (SiNW) radial junction (RJ) solar cells using hydrogenated microcrystalline silicon (μc-Si:H) as absorber material have been studied. Since 2013, the performance of such RJ devices has been limited by the low fill factor (FF) and open-circuit voltage (V_OC). Thanks to the use of n-type hydrogenated microcrystalline silicon oxide (μc-SiO_x:H) as a bottom doped layer, the authors developed μc-Si:H RJ solar cells with a FF of 69.7% and a V_OC of 0.41 V yielding a power conversion efficiency of 4.1%, which is more than 40% higher than the previously published efficiency record of 2.9%. Herein, the role of n-type μc-SiO_x:H in the improvement of FF is highlighted.

中文翻译：

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用于径向结器件的具有 μc-Si:H 吸收剂的硅纳米线太阳能电池

已经研究了使用氢化微晶硅 (μc-Si:H) 作为吸收材料的硅纳米线 (SiNW) 径向结 (RJ) 太阳能电池。自 2013 年以来，此类 RJ 设备的性能一直受到低填充因子 (FF) 和开路电压 ( V _OC ) 的限制。由于使用 n 型氢化微晶氧化硅 (μc-SiO _x :H) 作为底部掺杂层，作者开发出 FF 为 69.7%、V _OC为 0.41 V 的μc-Si:H RJ 太阳能电池产生 4.1% 的电源转换效率，比之前公布的 2.9% 的效率记录高出 40% 以上。在此，突出了 n 型 μc-SiO _x :H 在改善 FF 中的作用。