The results of studying the profiles of the distribution of nickel atoms implanted in silicon by the Rutherford backscattering method depending on the irradiation dose and annealing temperature are presented. The effect of thermal annealing on the distribution of nickel and, in particular, oxygen is studied. It is proved that under certain conditions of heat treatment and radiation doses, so-called epitaxial silicides are formed on the surface of a single crystal, which can play the role of conducting layers or metal coatings. The possibility of using the Rutherford backscattering method for analyzing both the distribution of the concentration of dopants and their interaction is noted.

中文翻译：

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硅中注入镍的分布曲线及退火对结构影响的研究

介绍了通过卢瑟福背散射方法研究注入硅中镍原子分布分布的结果，该分布取决于辐照剂量和退火温度。研究了热退火对镍，尤其是氧分布的影响。证明在一定的热处理和辐射剂量条件下，单晶表面会形成所谓的外延硅化物，可以起到导电层或金属涂层的作用。注意到使用卢瑟福反向散射方法分析掺杂剂浓度分布及其相互作用的可能性。