ABSTRACT

In the present work, pure and divalent Cd²⁺ ions-doped Cu₂Se thin films were deposited on glass substrates by using a simple chemical bath deposition method. The effects of Cd²⁺ doping on the structural, morphological, compositional, optical, and electrical properties of the Cu₂Se thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), diffuse reflectance spectra and Hall Effect analysis. The XRD pattern reveals that both pure and Cd²⁺-doped Cu₂Se thin films crystallised in a cubic structure and the shift in the major peak position confirm the incorporation of Cd²⁺ ions into Cu₂Se. FESEM images show the growth of Cu₂Se particles uniformly distributed over the substrate. The optical property of the films shows higher absorption in the visible region for pure and Cd²⁺-doped films. The Hall Effect analysis shows p-type conductivity for all the films.

摘要

在目前的工作中，使用简单的化学浴沉积方法在玻璃基板上沉积了纯二价 Cd ²⁺离子掺杂的 Cu ₂ Se 薄膜。使用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FESEM)、能量色散显微镜研究了 Cd ²⁺掺杂对 Cu ₂ Se 薄膜的结构、形态、成分、光学和电学性质的影响。X 射线光谱 (EDS)、漫反射光谱和霍尔效应分析。XRD 图显示纯的和 Cd ²⁺掺杂的 Cu ₂ Se 薄膜均以立方结构结晶，并且主峰位置的移动证实了 Cd ²⁺的掺入离子转化为 Cu ₂ Se。FESEM 图像显示Cu ₂ Se 颗粒在基板上均匀分布的生长。对于纯薄膜和 Cd ²⁺掺杂薄膜，薄膜的光学特性在可见光区显示出更高的吸收。霍尔效应分析显示所有薄膜的 p 型导电性。