Silicon–Germanium is an excellent and well-proven alloy with wide application in the transistor technology and space industries because of its meritorious features such as easy to form both n- and p-type depending on the dopant, environment friendliness, highly abundant material on earth's crust, high mechanical strength etc. This review article highlights the status, potential, and challenges associated with thermoelectric applications. In spite of the fact that Si–Ge exhibits a complex phase diagram due to the wide separation between the solidus and liquidus line, solid-state synthesis could overcome the difficulties associated with the homogeneity and is an epitome to achieve single-phase alloy. Moreover, the beauty of the method is that the yield of the product is very high. This review article also encompasses the strategies involved to reduce the thermal conductivity of the alloy which is otherwise essential to have high figure-of-merit (zT). It also highlights the importance of bulk nanostructuring, which still embraces the title of highest ever reported zT of both n- and p-type bulk Si–Ge alloy. Towards the end, the review opens up a new avenue for exploring methods to reduce the internal resistance of the Si–Ge unicouple and fabrication of DC-DC booster circuit so that the demand for higher voltage can be realized.

硅锗是一种优异且经过充分验证的合金，由于其优异的特性，例如根据掺杂剂易于形成 n 型和 p 型、环境友好、材料丰富，因此在晶体管技术和航天工业中得到广泛应用。地壳、高机械强度等。这篇评论文章重点介绍了与热电应用相关的现状、潜力和挑战。尽管由于固相线和液相线之间的广泛分离，Si-Ge 表现出复杂的相图，但固态合成可以克服与均匀性相关的困难，是实现单相合金的缩影。而且，该方法的美妙之处在于产品的收率非常高。zT )。它还强调了体纳米结构的重要性，它仍然包含有史以来最高的 n 型和 p 型体硅锗合金zT的称号。最后，该综述为探索降低Si-Ge单电偶内阻的方法和DC-DC升压电路的制造开辟了一条新途径，以实现对更高电压的需求。