A nearly-ideal edge termination for GaN p–n junctions was designed and demonstrated using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra-high-pressure annealing process after implanting Mg-ions into the etched n-type region outside the main p–n junction. The results of the technology computer-aided design simulation indicate that by optimizing the space and width of the rings, the breakdown voltage (BV) can be increased by over 90% of the ideal parallel plane BV (973 V). Accordingly, the fabricated diodes exhibited low leakage current and a BV of 897 V (92% of the ideal BV).

中文翻译：

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使用 Mg 注入的场限环设计和演示 GaN p-n 结的近乎理想的边缘终端

使用 Mg 离子注入场限环 (FLR) 设计并演示了一种近乎理想的 GaN p-n 结边缘终端。在将镁离子注入主 p-n 结外的蚀刻 n 型区域后，通过超高压退火工艺制造 FLR。技术计算机辅助设计仿真结果表明，通过优化环的空间和宽度，击穿电压（BV）可提高理想平行平面 BV（973 V）的 90% 以上。因此，制造的二极管表现出低漏电流和 897 V 的 BV（理想 BV 的 92%）。