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Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-06-23 , DOI: 10.35848/1882-0786/ac0b08
Noriyuki Miyata 1 , Kyoko Sumita 1 , Akira Yasui 2 , Ryousuke Sano 3 , Reito Wada 3 , Hiroshi Nohira 3
Affiliation  

Metal-oxide-semiconductor capacitors with HfO2/1-monolayer TiO2/SiO2 stacks were examined to explore the origin of the interface dipole modulation. The capacitance–voltage (C–V) measurements exhibited that the polarity of the interface dipole layer changes depending on the gate bias. The hard X-ray photoelectron spectroscopy measurements demonstrated that an applied gate voltage induces small changes in the Ti–O chemical bonding and potential profile around the HfO2/SiO2 interface.



中文翻译:

HfO2/1-单层 TiO2/SiO2 金属氧化物半导体叠层的电致变化:电容-电压和硬 X 射线光电子能谱研究

研究了具有 HfO 2 /1 单层 TiO 2 /SiO 2叠层的金属氧化物半导体电容器,以探索界面偶极调制的起源。电容-电压 ( C-V ) 测量表明界面偶极子层的极性随栅极偏压而变化。硬 X 射线光电子能谱测量表明,施加的栅极电压会导致 HfO 2 /SiO 2界面周围的 Ti-O 化学键和电位分布发生微小变化。

更新日期:2021-06-23
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