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Nanoscale domain wall devices with magnetic tunnel junction read and write
Nature Electronics ( IF 34.3 ) Pub Date : 2021-06-23 , DOI: 10.1038/s41928-021-00593-x
E. Raymenants , O. Bultynck , D. Wan , T. Devolder , K. Garello , L. Souriau , A. Thiam , D. Tsvetanova , Y. Canvel , D. E. Nikonov , I. A. Young , M. Heyns , B. Soree , I. Asselberghs , I. Radu , S. Couet , V. D. Nguyen

The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read and write, and fast domain wall motion via spin–orbit torque. The devices have a hybrid free layer design that consists of platinum/cobalt (Pt/Co) or a synthetic antiferromagnet (Pt/Co/Ru/Co) into the free layer of conventional MTJs. We show that our devices can achieve good tunnelling magnetoresistance readout and efficient spin-transfer torque writing that is comparable to current magnetic random-access memory technology, as well as domain wall depinning efficiency that is similar to stand-alone materials. We also show that a domain wall conduit based on a synthetic antiferromagnet offers the potential for reliable domain wall motion and faster write speed compared with a device based on Pt/Co.



中文翻译:

具有磁性隧道结读写的纳米级畴壁器件

控制磁性纳米结构中的快速畴壁运动可以形成新型磁存储器和逻辑器件的基础。然而,目前用于读取和写入畴壁的方法需要外部磁场,或者基于与高速畴壁运动不兼容的传统磁性隧道结 (MTJ)。在这里,我们报告了基于垂直 MTJ 的畴壁器件,该器件提供电读写,并通过自旋轨道扭矩实现快速畴壁运动。这些器件采用混合自由层设计,由铂/钴 (Pt/Co) 或合成反铁磁体 (Pt/Co/Ru/Co) 组成,进入传统 MTJ 的自由层。我们表明,我们的器件可以实现与当前磁性随机存取存储器技术相媲美的良好隧道磁阻读出和高效自旋转移矩写入,以及与独立材料相似的畴壁脱钉效率。我们还表明,与基于 Pt/Co 的设备相比,基于合成反铁磁体的畴壁导管提供了可靠的畴壁运动和更快的写入速度的潜力。

更新日期:2021-06-23
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