Herein, the investigation of radiation-induced defects generated in the Al/SiO₂/p-type FZ Si surface barrier detector upon irradiation with α-particles at room temperature using capacitance−voltage (C−V) and current deep-level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V measurements indicate the formation of at least 8 × 10¹² cm⁻³ radiation-induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy-interstitial pairs is created by the incoming α-particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near-midgap level at E _V + 0.56 eV. This level can apparently be associated with V₂O defects recognized previously to be responsible for the space−charge sign inversion in the irradiated n-type Si detectors.

中文翻译：

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p型硅面垒探测器中α粒子辐照引起的电活性缺陷

在此，使用电容-电压 ( C-V ) 和电流深能级瞬态光谱研究在室温下用 α 粒子照射Al/SiO ₂ /p 型 FZ Si 表面势垒探测器中产生的辐射诱导缺陷(IDLTS) 方法进行。进行的C-V测量表明，在相当接近的深度处形成了至少 8 × 10 ¹²  cm ^-3辐射诱导的受体陷阱，根据 TRIM 模拟，空位 - 间隙对的最高浓度是由传入的 α 粒子。当前 DLTS 技术进行的研究允许将观察到的受体浓度增加与在È _V  + 0.56电子伏特。该水平显然与先前认识到的V ₂ O 缺陷有关，该缺陷是受辐照 n 型 Si 探测器中空间电荷符号反转的原因。