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Broadband, High-Frequency Permittivity Characterization for EpitaxialBa1−xSrxTiO3Composition-Spread Thin Films
Physical Review Applied ( IF 4.6 ) Pub Date : 2021-06-24 , DOI: 10.1103/physrevapplied.15.064061
Eric J. Marksz , Aaron M. Hagerstrom , Xiaohang Zhang , Naila Al Hasan , Justin Pearson , Jasper A. Drisko , James C. Booth , Christian J. Long , Ichiro Takeuchi , Nathan D. Orloff

Next-generation millimeter-wave (>30GHz) telecommunications electronics must be compact, energy efficient, and have good thermal management. Tunable materials may play a role in meeting these requirements for millimeter-wave front-end devices, but there are few models or even measurements of tunable dielectrics at these frequencies. Here, we report on the adaptation and development of high-frequency dielectric spectroscopy techniques for composition-spread thin films from 100 MHz to 110 GHz. Our comprehensive technique sequentially probes the composition, frequency, and electric field dependence of the complex permittivity in a combinatorial thin film library, which provides a platform to rapidly explore functional materials for emerging telecommunications electronics. This is achieved by modifying existing on-wafer transmission line permittivity measurement techniques to obtain a compact set of test devices that can be patterned to extract the complex permittivity in multiple regions of a thin film. We demonstrate this technique by applying it to composition-spread Ba1xSrxTiO3 thin films spanning compositions from x=0 to x=1. The systematic approach to materials growth inherent in combinatorial synthesis allows for a comprehensive picture of the Ba1xSrxTiO3 system. Our continuous, quantitative measurements provide an encompassing view of the composition- and voltage-dependent trends in the room temperature dielectric properties at millimeter-wave frequencies—from strong, few-picosecond relaxations to no relaxation, and from large relative tunability (nr>50% at 75kVcm1) to zero tunability. Our work underscores both the utility of our technique, and the need to discover lower-loss, highly tunable electronic materials for next-generation telecommunications.

中文翻译:

外延Ba1−xSrxTiO3 成分扩展薄膜的宽带、高频介电常数表征

下一代毫米波 (>30吉赫兹)电信电子设备必须紧凑、节能且具有良好的热管理。可调谐材料可能在满足毫米波前端设备的这些要求方面发挥作用,但在这些频率下可调谐电介质的模型甚至测量很少。在这里,我们报告了用于 100 MHz 到 110 GHz 的成分扩展薄膜的高频介电光谱技术的适应和发展。我们的综合技术在组合薄膜库中依次探测复介电常数的组成、频率和电场依赖性,这为快速探索新兴电信电子产品的功能材料提供了平台。这是通过修改现有的晶圆上传输线介电常数测量技术来实现的,以获得一组紧凑的测试设备,可以对其进行图案化以提取薄膜多个区域中的复介电常数。我们通过将其应用于组合传播来展示这种技术1-XX3 跨越组合物的薄膜 X=0X=1. 组合合成中固有的材料生长的系统方法可以全面了解 1-XX3系统。我们连续的定量测量提供了毫米波频率下室温介电特性的成分和电压相关趋势的全面视图——从强、几皮秒弛豫到无弛豫,以及较大的相对可调性(nr>50%75C-1) 到零可调性。我们的工作既强调了我们技术的实用性,也强调了为下一代电信发现低损耗、高度可调的电子材料的必要性。
更新日期:2021-06-24
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