Wafer rotational grinding is widely employed for back-thinning and flattening of semiconducting wafers during the manufacturing process of integrated circuits. Grit cutting depth is a comprehensive indicator that characterizes overall grinding conditions, such as the wheel structure, geometry, abrasive grit size, and grinding parameters. Furthermore, grit cutting depth directly affects wafer surface/subsurface quality, grinding force, and wheel performance. The existing grit cutting depth models for wafer rotational grinding cannot provide reasonable results due to the complex grinding process under extremely small grit cutting depth. In this paper, a new grit cutting depth model for wafer rotational grinding is proposed which considers machining parameters, wheel grit shape, wheel surface topography, effective grit number, and elastic deformation of the wheel grit and the workpiece during the grinding process. In addition, based on grit cutting depth and ground surface roughness relationship, a series of grinding experiments under various grit cutting depths are conducted to produce silicon wafers with various surface roughness values and compare the predictive accuracy of the proposed model and the existing models. The results indicate that predictions obtained by the proposed model are in better agreement with the experimental results, while accuracy is improved by 40%–60% compared to the previous models.

晶圆旋转研磨广泛用于集成电路制造过程中半导体晶圆的背面减薄和平整。磨粒切削深度是表征整体磨削条件的综合指标，如砂轮结构、几何形状、磨粒尺寸和磨削参数。此外，磨粒切割深度直接影响晶片表面/亚表面质量、磨削力和砂轮性能。由于在极小的磨粒切割深度下磨削过程复杂，现有的用于晶片旋转磨削的磨粒切割深度模型无法提供合理的结果。在本文中，提出了一种新的晶圆旋转磨削磨粒切割深度模型，该模型考虑了加工参数、砂轮磨粒形状、砂轮表面形貌、有效磨粒数、磨削过程中砂轮与工件的弹性变形。此外，基于磨粒切割深度与磨削表面粗糙度的关系，进行了一系列不同磨粒切割深度下的磨削实验，以生产各种表面粗糙度值的硅片，并比较了所提出模型和现有模型的预测精度。结果表明，所提出的模型获得的预测与实验结果更加吻合，而准确率与之前的模型相比提高了 40%–60%。进行了一系列不同磨粒切割深度下的磨削实验，以生产具有各种表面粗糙度值的硅晶片，并比较所提出模型和现有模型的预测精度。结果表明，所提出的模型获得的预测与实验结果更加吻合，而准确率与以前的模型相比提高了 40%–60%。进行了一系列不同磨粒切割深度下的磨削实验，以生产具有各种表面粗糙度值的硅晶片，并比较所提出模型和现有模型的预测精度。结果表明，所提出的模型获得的预测与实验结果更加吻合，而准确率与以前的模型相比提高了 40%–60%。