Micro and Nanostructures ( IF 3.1 ) Pub Date : 2021-06-22 , DOI: 10.1016/j.spmi.2021.106970 Shiva Khani , Mohsen Hayati
In this paper, an elliptical resonator coupled to a straight metal-insulator-metal waveguide through a silicon layer is used for sensing application. The finite-difference time-domain method is used for the numerical investigation of the proposed structure. Such a structure demonstrates a multi resonance mode in the transmission spectrum. Based on the obtained results, the sensitivity can be reached to a value as high as 550 nm per refractive-index unit with a high FOM value of 282.5 RIU−1 around the resonance wavelength of 592 nm. In this structure, in addition to using a high Q-factor resonator, the resonance profile is localized and concentrated on the analyte to achieve an ultra-high sensitive refractive index sensor. Also, the effect of structural parameters on the transmission spectrum is investigated by sweeping them. Taking into account the obtained notable specifications such as ultra-high sensitivity and simplicity of the design and fabrication process, the presented structure can be employed in optical integrated circuits, particularly in high sensitivity sensors.
中文翻译:
使用椭圆谐振器和 MIM 波导的超高灵敏度等离子体折射率传感器
在本文中,通过硅层耦合到直金属-绝缘体-金属波导的椭圆谐振器用于传感应用。有限差分时域方法用于对所提出的结构进行数值研究。这种结构在透射光谱中表现出多共振模式。根据获得的结果,灵敏度可以达到每个折射率单位高达 550 nm 的值,具有 282.5 RIU -1的高 FOM 值在 592 nm 的共振波长附近。在这种结构中,除了使用高 Q 因数谐振器之外,谐振轮廓被定位并集中在分析物上,以实现超高灵敏度的折射率传感器。此外,通过扫描它们来研究结构参数对透射光谱的影响。考虑到获得的显着规格,例如超高灵敏度和设计和制造过程的简单性,所提出的结构可用于光学集成电路,特别是高灵敏度传感器。