In this article, we investigate the existence and the behaviour of electronic states located in the band gap of Multi-Quantum Wells (MQWs) disturbed by two layers of defects. The MQWs consist of two periodic semiconductor materials ($\mathrm{GaAs}/{\mathrm{Ga}}_{1-\mathrm{x}}{\mathrm{Al}}_{\mathrm{x}}\mathrm{A}\mathrm{s}/\mathrm{GaAs}$), and the whole structure is sandwiched between two GaAs substrates of the same nature. We use the formalism of the interface response theory to study the transmission and the variation of energy levels. The creation of defects in the MQWs is carried out either by a local modification of the concentration of aluminium x or by changing the thickness of the layers in the studied structure. In a first study, we insert two geometrical defects inside the perfect MQWs that show a modification in the electronic band structure, which leads to a variation of the energies of the electronics states. Then we perturb the perfect MQWs by two material defects, which modify the barrier heights and the effective masses of the two defects layers. The results show that the position, thickness, and concentration of Al in the two defective layers play a crucial role in increasing electronic states, thus promoting the transfer of electrons without using higher energy. These electronic states are of practical interest for the characterization of the electronic properties of thin-film materials and can be the basis of new electronic and optoelectronic devices.

在本文中，我们研究了位于受两层缺陷干扰的多量子阱 (MQW) 带隙中的电子态的存在和行为。MQW 由两种周期性半导体材料组成（$\mathrm{砷化镓}/{\mathrm{镓}}_{1-\mathrm{X}}{\mathrm{铝}}_{\mathrm{X}}\mathrm{一个}\mathrm{s}/\mathrm{砷化镓}$)，整个结构夹在两个性质相同的 GaAs 衬底之间。我们使用界面响应理论的形式来研究能级的传输和变化。MQW 中缺陷的产生是通过局部改变铝 x 的浓度或通过改变所研究结构中的层厚度来实现的。在第一项研究中，我们在完美的 MQW 中插入了两个几何缺陷，这些缺陷显示了电子能带结构的修改，这导致了电子态能量的变化。然后我们通过两个材料缺陷来扰动完美的 MQW，这会修改两个缺陷层的势垒高度和有效质量。结果表明，位置、厚度、两个缺陷层中Al的浓度和浓度在增加电子态方面起着至关重要的作用，从而在不使用更高能量的情况下促进电子的转移。这些电子态对于表征薄膜材料的电子特性具有实际意义，并且可以成为新型电子和光电器件的基础。