Ultrathin Cu(InGa)Se₂ (CIGS) material has become one of the emerging material in the research of solar cell fields due to its excellent optical, electrical and tunable bandgap properties. In this study, we have described a numerical simulation of ultrathin CIGS solar cell using SCAPS-1D program tool based on WS₂ as a buffer layer, CIGS as an absorber layer with a-Si/MoTe₂ as a hole transport layer (HTL). The proposed study also reveals that a-Si is better choice for HTL as compared to MoTe₂ for CIGS solar cell. The cell parameters such as thickness, defect density and acceptor concentration of CIGS absorber layer have been optimized in proposed work. Based on optimization, the maximum power conversion efficiency (PCE) of 30.17% ₍$V_{\mathit{oc}}$ =1.093Volts,$J_{\mathit{sc}}$=32.41 mA/cm² and $\mathit{FF}$=85.12%) has been reached for CIGS solar cell with a-Si HTL. The simulation further analyzed at various operating temperature and series resistance for better understanding of the solar device. All these simulation provide noteworthy manifestation for the fabrication of high efficient ultrathin energy harvesting application.

超薄Cu(InGa)Se ₂ (CIGS)材料由于其优异的光学、电学和可调带隙特性，已成为太阳能电池领域研究的新兴材料之一。在这项研究中，我们描述了使用 SCAPS-1D 程序工具对超薄 CIGS 太阳能电池的数值模拟，该工具基于 WS ₂作为缓冲层，CIGS 作为吸收层，a-Si/MoTe ₂作为空穴传输层 (HTL) . 拟议的研究还表明，与用于 CIGS 太阳能电池的MoTe ₂相比，a-Si 是 HTL 的更好选择。CIGS 吸收层的厚度、缺陷密度和受主浓度等电池参数已在拟议工作中进行了优化。基于优化，最大功率转换效率（PCE）30.17%₍${伏}_{\mathit{oc}}$ =1.093 伏特，$J_{\mathit{sc}}$=32.41  mA/cm ²和$\mathit{FF}$=85.12%) 已达到具有 a-Si HTL 的 CIGS 太阳能电池。模拟进一步分析了各种工作温度和串联电阻，以更好地了解太阳能设备。所有这些模拟为高效超薄能量收集应用的制造提供了值得注意的体现。