Over the last decade, dc–dc power converters have attracted significant attention due to their increased use in a number of applications from aerospace to renewable energy. The interest in wide bandgap (WBG) power semiconductor devices stems from outstanding features of WBG materials, power device operation at higher temperatures, larger breakdown voltages, and the ability to sustain larger switching transients than silicon (Si) devices. As a result, recent progress and development of converter topologies, based on WBG power devices, are well-established for power conversion applications in which classical Si-based power devices show limited operation. Currently, Si carbide (SiC) and gallium nitride (GaN) are the most promising semiconductor materials that are being considered for the new generation of power devices. The use of new power semiconductor devices, such as GaN high electron mobility transistors (GaN HEMTs), leads to minimization of switching losses, allowing high switching frequencies (from kHz to MHz) for realizing compact power converters. Finally, design recommendations and future research trends are also presented.

中文翻译：

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用于电源应用的宽带隙 DC-DC 转换器拓扑

在过去十年中，dc-dc 电源转换器因其在从航空航天到可再生能源的许多应用中的使用增加而引起了极大的关注。对宽带隙 (WBG) 功率半导体器件的兴趣源于 WBG 材料的突出特性、功率器件在更高温度下的操作、更大的击穿电压以及比硅 (Si) 器件承受更大的开关瞬变的能力。因此，基于 WBG 功率器件的转换器拓扑的最新进展和发展在功率转换应用中得到了很好的证实，在这些应用中，经典的基于硅的功率器件显示出有限的操作。目前，碳化硅（SiC）和氮化镓（GaN）是最有前途的半导体材料，正在考虑用于新一代功率器件。使用新型功率半导体器件，例如 GaN 高电子迁移率晶体管 (GaN HEMT)，可最大限度地降低开关损耗，从而实现高开关频率（从 kHz 到 MHz）以实现紧凑型功率转换器。最后，还提出了设计建议和未来的研究趋势。