In this article, carrier lifetime degradation phenomena on fired gallium-doped Czochralski-grown silicon (Cz-Si:Ga) and boron-doped float-zone silicon (FZ-Si:B) are observed. We examine lifetime degradation and regeneration as a function of illumination intensity and temperature and observe qualitatively similar degradation effects in both material classes, which are triggered by a fast-firing high-temperature step. Charge carrier injection, e.g., through illumination, is required to activate the defects responsible for degradation. The extent of degradation increases with increasing temperature, which is untypical for degradation effects reported before. Despite different degradation time constants are measured for Cz-Si:Ga and FZ-Si:B, the activation energies are for both materials in the narrow range $({0.58 \pm 0.04}){\boldsymbol{\ }}{{\bf eV}}$ . The extracted activation energy is quite different compared with other degradation effects in silicon, suggesting a novel defect formation mechanism. Since the lifetime degradation is triggered by the fast-firing of the silicon wafers during the presence of a hydrogen-rich dielectric at the surface, the involvement of hydrogen in the defect reaction is very likely. During prolonged illumination at elevated temperature (135 °C), we observe a permanent regeneration of the lifetime, whereas at temperatures close to room temperature (36 °C), the defect deactivation is only temporary.

中文翻译：

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掺镓和掺硼单晶硅材料的载流子寿命降解和再生

在本文中，观察了烧制的掺镓直拉生长硅 (Cz-Si:Ga) 和掺硼浮区硅 (FZ-Si:B) 上的载流子寿命退化现象。我们研究了作为光照强度和温度函数的寿命退化和再生，并观察到两种材料类别的质量相似的退化效应，这是由快速燃烧的高温步骤触发的。需要电荷载流子注入，例如通过照明，来激活导致退化的缺陷。降解的程度随着温度的升高而增加，这对于之前报道的降解效应来说是不典型的。尽管 Cz-Si:Ga 和 FZ-Si:B 的降解时间常数不同，但两种材料的活化能都在窄范围内$({0.58 \pm 0.04}){\boldsymbol{\ }}{{\bf eV}}$ . 与硅中的其他降解效应相比，提取的活化能有很大不同，这表明了一种新的缺陷形成机制。由于在表面存在富氢电介质期间硅晶片的快速烧制会引发寿命降低，因此很可能氢参与缺陷反应。在高温 (135 °C) 下长时间光照期间，我们观察到寿命的永久再生，而在接近室温 (36 °C) 的温度下，缺陷失活只是暂时的。