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Influence of Intrinsic Silicon Layer and Intermediate Silicon Oxide Layer on the Performance of Inline PECVD Deposited Boron-Doped TOPCon
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2021-04-30 , DOI: 10.1109/jphotov.2021.3071220
Angelika Harter 1 , Jana-Isabelle Polzin 1 , Leonard Tutsch 1 , Jan Temmler 1 , Marc Hofmann 1 , Anamaria Moldovan 1 , Frank Feldmann 1
Affiliation  

In this article, the development and optimization of carrier-selective and passivating contacts by industry-scale inline plasma-enhanced chemical vapor deposition and their successful integration into solar cells are reported. Amorphous Si thin films with varying carbon content (SiC x ) were deposited on a thermally grown ultrathin tunnel oxide (TOPCon) and electrically characterized. Furthermore, the impact of a vacuum break (VB) during the deposition of a layer stack consisting of intrinsic amorphous Si [a-Si:H(i)] and boron-doped SiC x was investigated. That is, samples that were processed with VB were exposed to ambient air, and hence, a thin native oxide was formed on the a-Si:H(i) layer, which affected the boron diffusion into the absorber resulting in a distinct anneal behavior of the contacts. Upon optimization, these layers provided an excellent surface passivation quality, which was reflected in an implied open-circuit voltage of 733 mV for n-type and 716 mV for p-type TOPCon structures, respectively. In addition, very low contact resistivities of 0.3 mΩ⋅cm² for n-type and 0.5 mΩ⋅cm² for p-type TOPCon were measured, respectively. These optimized TOPCon structures were implemented into both sides contacted p-type laboratory solar cells. After a two-step furnace anneal, these cells achieved a maximum energy conversion efficiency of 22.7% with evaporated contacts.

中文翻译:

本征硅层和中间氧化硅层对在线PECVD沉积掺硼TOPCon性能的影响

在本文中,报告了通过工业规模在线等离子体增强化学气相沉积开发和优化载流子选择性和钝化触点,并将其成功集成到太阳能电池中。具有不同碳含量 (SiC x ) 的非晶硅薄膜 沉积在热生长的超薄隧道氧化物 (TOPCon) 上并进行电学表征。此外,在沉积由本征非晶 Si [a-Si:H(i)] 和掺硼 SiC x组成的层堆叠期间真空破坏 (VB) 的影响 被调查。也就是说,用 VB 处理的样品暴露在环境空气中,因此,在 a-Si:H(i) 层上形成了薄的天然氧化物,这会影响硼扩散到吸收体中,从而导致明显的退火行为的联系人。经过优化,这些层提供了出色的表面钝化质量,这反映在 n 型 733 mV 的隐含开路电压和 p 型 TOPCon 结构的 716 mV 上。此外,还分别测量了 n 型 0.3 mΩ·cm² 和 p 型 TOPCon 的 0.5 mΩ·cm² 的极低接触电阻率。这些优化的 TOPCon 结构被实施到两侧接触的 p 型实验室太阳能电池中。经过两步炉退火后,这些电池在蒸发触点的情况下实现了 22.7% 的最大能量转换效率。
更新日期:2021-06-22
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