Seed-assisted cast-mono silicon for photovoltaic (PV) application is a relevant alternative to the conventional Czochralski (Cz) in terms of cost and carbon footprint. Despite the remarkable PV conversion efficiencies reached when combining this material with novel cell concepts, cast-mono industrial deployment is infringed by the propagation of dislocation clusters during crystallization, inducing variations in final wafers quality. Indeed, some wafers feature dislocation-rich regions whose recombination activity is not fully understood. This article aims at providing insights into the carrier recombination in such regions. We focus on n-type cast mono grown from a compensated feedstock in order to obtain samples with the same crystallographic properties but different electron concentration ( n ₀ ) values. The bulk carrier lifetime in the dislocation-rich region could be approximated by the combination of two discrete defects for which the symmetry factor k could be estimated first by exploiting the relationship between the defect lifetime gradient with 1/ n ₀ . Both defects energy positions ( E_T ) could be obtained, thanks to the defect parameter surface solution method. We analyzed the variations of the first defect Shockley–Read–Hall (SRH) parameters ( E_T , k , and hole lifetime constant τ_{p 0} ) with n ₀ and for temperatures ranging from 30 to 75 °C. A temperature-assisted transition of the first defect from one state to another was highlighted and was found to be enhanced by low n ₀ values. For each state, the SRH parameters were extracted.

中文翻译：

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使用依赖注入的寿命光谱方法分析铸造单晶硅中的寿命限制缺陷

就成本和碳足迹而言，用于光伏 (PV) 应用的种子辅助铸造单晶硅是传统直拉 (Cz) 的相关替代品。尽管将这种材料与新型电池概念相结合时可达到显着的光伏转换效率，但结晶过程中位错簇的传播会影响铸造单晶工业部署，从而导致最终晶片质量的变化。事实上，一些晶圆具有富含位错的区域，其重组活动尚未完全了解。本文旨在深入了解这些地区的载体重组。我们专注于从补偿原料生长的 n 型铸造单晶，以获得具有相同晶体学特性但不同电子浓度的样品（ n ₀ ) 值。富位错区域的体载流子寿命可以通过两个离散缺陷的组合来近似，其对称因子为克 可以首先通过利用缺陷寿命梯度与 1/ n ₀ . 两个缺陷能量位置 ( Ë _Ť ) 可以得到，这要归功于缺陷参数表面求解方法。我们分析了第一个缺陷 Shockley-Read-Hall (SRH) 参数的变化（ Ë _Ť , 克 , 和空穴寿命常数 τ _{p 0} ) 与n ₀和 30 至 75 °C 的温度范围。强调了第一个缺陷从一种状态到另一种状态的温度辅助转变，并发现通过低n ₀值。对于每个状态，提取 SRH 参数。