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Hybrid Inorganic–Organic Inverted Solar Cells With ZnO/ZnMgO Barrier Layer and Effective Organic Active Layer for Low Leakage Current, Enhanced Efficiency, and Reliability
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2021-04-13 , DOI: 10.1109/jphotov.2021.3067828
Ashutosh Kumar Dikshit , Santanu Maity , Nillohit Mukherjee , P. Chakrabarti

This article reports fabrication and characterization of an Inverted inorganic–organic hybrid solar cell based on ITO/(ZnO/ZnMgO)/ZnONR/PCBM/P3HT:PCBM/PEDOT:PSS/Ca-Al heterostructure. Four different cells were fabricated with and without the presence of both the ZnO/ZnMgO barrier layer and ZnO nanorod (NR) structures. The oxide layers were grown on indium tin oxide (ITO) coated glass substrates through the following approaches: i) ZnO layer by radio frequency (RF) sputtering, ii) ZnMgO layer by pulsed laser deposition technique, and iii) ZnO NR by hydrothermal method. Compared to conventional only ZnO based solar cells, incorporation of ZnO/ZnMgO layer as the barrier layer resulted in low leakage current that enormously improved the cell performance. The binary metal oxide layer offers a chemical barrier that protects the ITO layer and leads to better electron collection. Incorporation of a thick (∼300 nm) P3HT:PCBM layer (instead of conventional and thin (∼100 nm) P3HT coating) between the ZnO/ZnMgO and PEDOT:PSS layers improves electron collection efficiencies. Improvement in short circuit current density (J SC ) was observed from 9.5 to 12.3 mA/cm 2 . A significant increase in external quantum efficiency was also observed. Both J SC and fill factor were found to be improved simultaneously owing to suitable shunt and series resistance attributes. Furthermore, the presence of the thin ZnMgO layer between P3HT:PCBM and dense ZnO layer suppresses the impact of oxygen vacancies, which in turn improves the charge carrier mobility and lowers leakage current. The fabricated cell showed a power conversion efficiency of ∼4.95%. Reliability study for 1400 h indicates that the device outperforms the conventional ZnO-based inverted organic solar cells.

中文翻译:

具有 ZnO/ZnMgO 阻挡层和有效有机活性层的混合无机 - 有机倒置太阳能电池,可实现低漏电流、提高效率和可靠性

本文报道了一种基于 ITO/(ZnO/ZnMgO)/ZnONR/PCBM/P3HT:PCBM/PEDOT:PSS/Ca-Al 异质结构的倒置无机-有机混合太阳能电池的制造和表征。在存在和不存在 ZnO/ZnMgO 阻挡层和 ZnO 纳米棒 (NR) 结构的情况下制造了四种不同的电池。通过以下方法在氧化铟锡 (ITO) 涂层玻璃基板上生长氧化物层:i) 通过射频 (RF) 溅射的 ZnO 层,ii) 通过脉冲激光沉积技术的 ZnMgO 层,以及 iii) 通过水热法的 ZnO NR . 与传统的仅基于 ZnO 的太阳能电池相比,将 ZnO/ZnMgO 层作为阻挡层导致低漏电流,极大地提高了电池性能。二元金属氧化物层提供了一种化学屏障,可保护 ITO 层并导致更好的电子收集。在 ZnO/ZnMgO 和 PEDOT:PSS 层之间加入厚 (~300 nm) P3HT:PCBM 层(而不是传统的薄 (~100 nm) P3HT 涂层)提高了电子收集效率。短路电流密度的改善(J SC ) 在 9.5 至 12.3 mA/cm 2 之间观察到 。还观察到外部量子效率的显着增加。由于合适的并联和串联电阻属性,J SC和填充因子被发现同时得到改善。此外,P3HT:PCBM 和致密 ZnO 层之间存在的薄 ZnMgO 层抑制了氧空位的影响,从而提高了电荷载流子的迁移率并降低了漏电流。制造的电池显示出约 4.95% 的功率转换效率。1400 小时的可靠性研究表明,该器件优于传统的 ZnO 基倒置有机太阳能电池。
更新日期:2021-06-22
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