We present here an in-depth comprehensive study on the interplay between nitrogen (N) and various point defects in ZnO nanorods (NRs) implanted with 50 keV N ions with fluences from 1×10¹⁴ to 1×10¹⁶ ions/cm² followed by a thermal annealing at 450 °C separately in Ar, O₂ and excess Zn ambiences. Detailed X-ray diffractometry results reveal that N implantation induced structural damages increase sharply beyond 1×10¹⁵ ions/cm². The Raman scattering analyses are indicative of structural disorders due to various N related defect complexes. The analyses of X-ray photoelectron spectroscopy (XPS) results validate incorporation of N at O sublattice forming N_O acceptor and N_O-V_Zn acceptor complex in the implanted NRs. Post-implantation annealing in Ar and O₂ ambiences causes only N_O state, while annealing in excess Zn ambient induces an additional shallow donor (N₂)_O by substituting N₂ at O site. The XPS, Raman scattering, photoluminescence and Current-voltage measurement results combinedly illustrate that the post-implantation annealing in O₂ and Ar ambiences play a key role to stabilize the N dopants in ZnO NRs via reducing oxygen vacancy and/or preserving the concentration of N related acceptors. This study would therefore be a benchmark for understanding the role of defects in the N doping in ZnO NRs.

我们在这里提出的深入全面的研究对氧化锌纳米棒（NRS）从1×10与50千根电子伏N离子与通量注入的氮（N）和各种点缺陷之间的相互影响¹⁴〜1×10 ¹⁶ 离子/ cm ²，接着通过在 Ar、O ₂和过量 Zn 环境中分别在 450 °C 下进行热退火。详细的 X 射线衍射结果表明，N 注入引起的结构损伤急剧增加，超过 1×10 ¹⁵离子/cm ²。拉曼散射分析表明由于各种 N 相关缺陷复合物引起的结构紊乱。X 射线光电子能谱 (XPS) 结果的分析验证了 N 在 O 亚晶格处的结合形成 N _O受体和 N _O -V _Zn受体复合物在植入的 NRs 中。在Ar中后注入退火和O ₂氛围仅引起Ñ _ø状态，而在退火过量的Zn环境诱发一个附加的浅施主（N ₂）_ø通过用N ₂在澳站点。XPS、拉曼散射、光致发光和电流-电压测量结果综合说明，O _{2 中}的植入后退火和 Ar 环境在通过减少氧空位和/或保持 N 相关受体的浓度来稳定 ZnO NR 中的 N 掺杂剂方面起着关键作用。因此，这项研究将成为理解缺陷在 ZnO NR 中 N 掺杂中的作用的基准。