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Observation of the critical state to multiple-type Dirac semimetal phases in KMgBi
Journal of Applied Physics ( IF 3.2 ) Pub Date : 2021-06-18 , DOI: 10.1063/5.0045466
D. F. Liu 1 , L. Y. Wei 2 , C. C. Le 3 , H. Y. Wang 2 , X. Zhang 2 , N. Kumar 3 , C. Shekhar 3 , N. B. M. Schröter 4 , Y. W. Li 2 , D. Pei 4 , L. X. Xu 2 , P. Dudin 5 , T. K. Kim 5 , C. Cacho 5 , J. Fujii 6 , I. Vobornik 6 , M. X. Wang 2, 7 , L. X. Yang 8, 9 , Z. K. Liu 2, 7 , Y. F. Guo 2 , J. P. Hu 10 , C. Felser 3 , S. S. P. Parkin 1 , Y. L. Chen 2, 4, 7, 8
Affiliation  

Dirac semimetals are classified into different phases based on the types of Dirac fermions. Tuning the transition among different types of Dirac fermions in one system remains a challenge. Recently, KMgBi was predicted to be located at a critical state in which various types of Dirac fermions can be induced owing to the existence of a flatband. Here, we carried out systematic studies on the electronic structure of KMgBi single crystals by combining angle-resolve photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. The flatband was clearly observed near the Fermi level. We also revealed a small bandgap of ∼20 meV between the flatband and the conduction band. These results demonstrate the critical states of KMgBi that transition among various types of Dirac fermions can be tuned in one system.

中文翻译:

观察 KMgBi 中多型 Dirac 半金属相的临界状态

狄拉克半金属根据狄拉克费米子的类型分为不同的相。在一个系统中调整不同类型狄拉克费米子之间的转换仍然是一个挑战。最近,KMgBi 被预测处于临界状态,由于平带的存在,可以诱导各种类型的狄拉克费米子。在这里,我们通过结合角分辨光电发射光谱和扫描隧道显微镜/光谱对 KMgBi 单晶的电子结构进行了系统研究。在费米能级附近清楚地观察到平带。我们还揭示了平带和导带之间的约 20 meV 的小带隙。这些结果证明了 KMgBi 的临界状态,即可以在一个系统中调整各种类型的狄拉克费米子之间的跃迁。
更新日期:2021-06-21
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