The recent progress of selector and self-rectifying devices for resistive random-access memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

中文翻译：

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用于电阻式随机存取存储器应用的选择器和自整流器件的最新进展

回顾了用于电阻式随机存取存储器应用的选择器和自整流器件的最新进展。特别是，讨论了基于电阻开关 (RS) 器件的纵横阵列的性能、潜路径电流问题和可能的解决方案。这里阐述了选择器器件的参数和要求，综合了晶体管辅助晶体管一电阻、单极一二极管一电阻、双极一选择一电阻、阈值开关选择器等几种类型的选择器。讨论。在自整流器件的情况下，回顾了互补 RS 器件、基于空位调制的导电氧化物器件和基于隧道势垒的 RS 器件的最新进展。强调了选择器和自整流 RS 设备的开关机制和几何配置。此外，还评估了不同设备的比较评估。最后，概述了先前报告的设备中的差距，并建议了未来研究方向的一些关键改进。