Angular distributions of parametric X-ray radiation from 255-MeV electrons in a thin Si crystal have been investigated for asymmetric Laue geometries using an imaging plate as a two-dimensional position-sensitive X-ray detector. The peak intensities of parametric X-ray radiation observed for (111) and ($\overline{1}$ $\overline{1}$ 1) reflections, normalized by taking into account the effective target thickness and the transmission fraction of X-rays in the crystal, coincided within several percent. A large intensity difference depending on the asymmetry parameter, which is predicted by a dynamical theory dealing with the asymmetric Laue geometry, was not observed under the present experimental conditions. This indicates that the dependence of angular distributions of parametric X-ray radiation on the asymmetry parameter is negligibly weak, i.e., that it can be well explained by the well-established kinematical theory and dynamical theory as well as those for symmetric Laue and Bragg geometries.

已经使用成像板作为二维位置敏感 X 射线检测器研究了来自薄 Si 晶体中 255-MeV 电子的参量 X 射线辐射的角分布，用于不对称劳厄几何。观察到的参数 X 射线辐射的峰值强度（111）和（$\overline{1}$ $\overline{1}$1) 反射，通过考虑有效目标厚度和晶体中 X 射线的透射率归一化，在几个百分点内重合。在目前的实验条件下没有观察到取决于不对称参数的大强度差异，这是由处理不对称劳厄几何的动力学理论预测的。这表明参量 X 射线辐射角分布对不对称参数的依赖性微弱，可以用公认的运动学理论和动力学理论以及对称劳厄和布拉格几何学来解释。 .