Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr₂/SiO₂ interfaces are reported. Thin films of CdBr₂ are coated with 50 nm thick SiO₂ under a vacuum pressure of 10⁻⁵ mbar. The structural morphological and optical investigations have shown that CdBr₂ exhibit hexagonal structure of lattice parameters of $a=b=7.20\AA$ and $=13.86$ $\AA$, energy band gap of 3.32 eV and Urbach energy of 0.84 eV. The interfacing of CdBr₂ films with SiO₂, shortened the lattice parameters, blue-shifted the energy band gap and decreased the Urbach energy value. The electron affinity of CdBr₂ which is determined here is found to be 3.27 eV. The CdBr₂/SiO₂ interfaces displayed a conduction and a valence band offsets of 2.37 eV and 3.21 eV, respectively. In addition, the dielectric dispersion and optical conduction analyses using the Drude-Lorentz approach have shown that the drift mobility and plasmon frequency ($W_{\mathit{pi}}$) of the free charge carriers at the CdBr₂/SiO₂ interfaces varies in the range of 28.59–22.87 cm²/Vs and 0.41–6.47 GHz, respectively. The effectiveness of the plasmon frequency to limit signal propagation in the heterojunction devices is confirmed by the impedance spectroscopy technique which showed radiowave (RF) band filter characteristics at the targeted ${\mathit{W}}_{\mathit{pi}}$. The energy band offsets, the optical conductivity parameters and the RF filtering properties nominates the CdBr₂/SiO₂ heterojunctions for use in thin film transistor technology.

在此，报告了 CdBr ₂ /SiO ₂界面的结构、光学、介电和光导率参数。在10 ^-5毫巴的真空压力下用50nm厚的SiO ₂涂覆CdBr ₂薄膜。结构形态学和光学研究表明，CdBr ₂的晶格参数为六方结构。$\mathrm{一种}=乙=7.20\mathrm{一种}$ 和 $=13.86$ $\mathrm{一种}$，能带隙为 3.32 eV，Urbach 能量为 0.84 eV。CdBr ₂薄膜与SiO ₂的界面缩短了晶格参数，使能带隙蓝移并降低了Urbach 能量值。发现此处确定的 CdBr ₂的电子亲和力为3.27 eV。CdBr ₂ /SiO ₂界面分别显示出2.37 eV和3.21 eV的导带偏移和价带偏移。此外，使用 Drude-Lorentz 方法的介电色散和光导分析表明，漂移迁移率和等离子体频率（${宽}_{\mathit{圆周率}}$) CdBr ₂ /SiO ₂界面处的自由电荷载流子的变化范围分别为 28.59–22.87 cm ² /Vs 和 0.41–6.47 GHz。阻抗谱技术证实了等离子体频率对限制异质结器件中信号传播的有效性，该技术在目标处显示了无线电波 (RF) 带滤波器特性。${\mathit{宽}}_{\mathit{圆周率}}$. 能带偏移、光导率参数和RF滤波特性指定用于薄膜晶体管技术的CdBr ₂ /SiO ₂异质结。