The low work function material lithium fluoride (LiF) facilitates electron-selective contacts to n-type silicon and is frequently used in dopant-free heterocontacts for silicon solar cells. Our photoelectron spectroscopy (PES) data show that LiF deposition on n-Si leads, indeed, to Fermi-level crossing of the conduction band minimum. Furthermore, PES reveals intrinsic surface band bending on hydrogen-terminated p-Si(100). LiF deposition on p-Si leads to a rigid shift of the Si core-levels and the vacuum-level pointing to ideal Schottky contact formation. This is further supported by the open-circuit voltage of Al/LiF/p-Si/Al solar cells, which corresponds to the photoelectron spectroscopy (PES)-measured band bending magnitude.

中文翻译：

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通过绝缘体形成肖特基接触：硅上的氟化锂

低功函数材料氟化锂 (LiF) 促进了与 n 型硅的电子选择性接触，并且经常用于硅太阳能电池的无掺杂异质接触。我们的光电子能谱 (PES) 数据表明，n-Si 上的 LiF 沉积确实导致导带最小值的费米能级交叉。此外，PES 揭示了氢封端的 p-Si(100) 上的固有表面带弯曲。p-Si 上的 LiF 沉积导致 Si 核能级和真空能级的刚性转移，指向理想的肖特基接触形成。Al/LiF/p-Si/Al 太阳能电池的开路电压进一步支持了这一点，这与光电子能谱 (PES) 测量的能带弯曲幅度相对应。