Various approaches are being considered to address the demand for high-throughput (Gb/s) point-to-point wireless communication systems in 5G infrastructure and sub-THz transceivers. Two fully integrated CMOS wireless transmitters with frequency shift keying (FSK) modulation were prototyped in a standard 55 nm SiGe process. Benefiting from the coupled oscillator loop system, the single channel data rate up to 10 Gb/s wireless link (limited by measurement equipment) was demonstrated. The proposed coupled oscillator loop system enables instantaneous frequency shift in an ideal situation, which resolves overshoots/undershoots and long frequency settling issues in the conventional varactor-based LC voltage controlled oscillator. The measured single channel data rate is around 5× higher than the previously published CMOS/BiCMOS FSK transmitter.

中文翻译：

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CMOS中用于高数据速率亚太赫兹无线通信的超快频移机制

正在考虑各种方法来满足 5G 基础设施和亚太赫兹收发器中对高吞吐量 (Gb/s) 点对点无线通信系统的需求。两个具有频移键控 (FSK) 调制的完全集成 CMOS 无线发射器在标准 55 nm SiGe 工艺中进行了原型设计。受益于耦合振荡器环路系统，演示了高达 10 Gb/s 无线链路（受测量设备限制）的单通道数据速率。所提出的耦合振荡器环路系统能够在理想情况下实现瞬时频移，从而解决了传统基于变容二极管的 LC 压控振荡器中的过冲/下冲和长频率稳定问题。测得的单通道数据速率比之前发布的 CMOS/BiCMOS FSK 发射器高 5 倍左右。