This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The electrical leakage characteristics in the vertical GaN-on-Si SBD without edge termination sequentially go through the thermionic field emission, variable range hopping (VRH), and trap-assisted tunneling conduction mechanisms as the reverse bias increases gradually. Its leakage and breakdown mechanisms are limited by the edge electric field crowding effect. While for the vertical GaN-on-Si SBD with ArIT (ArIT-SBD), the electrons conduction at a low reverse bias, following the space-charge-limited conduction (SCLC) model, is limited by the damage-induced traps in the implanted GaN. As the reverse bias increases up to the occurrence of breakdown, the VRH and SCLC dominate the leakage mechanism of the ArIT-SBD, which stem from intrinsic traps in GaN grown on Si. A rapidly growing leakage under a low reverse bias and enhanced breakdown voltage performance in the ArIT-SBD is attributed to the charging of the damage-induced traps in implanted GaN. This Letter not only gives in-depth insights of vertical GaN-on-Si SBDs but also provides a useful design guidance of implanted termination for high-voltage power devices.

中文翻译：

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带有和不带有注入端接的垂直 GaN-on-Si 肖特基势垒二极管的反向泄漏和击穿机制

本文研究了带有和不带有氩注入终端 (ArIT) 的垂直 GaN-on-Si 肖特基势垒二极管 (SBD) 的反向泄漏和击穿机制。随着反向偏置逐渐增加，无边缘终止的垂直 GaN-on-Si SBD 中的漏电特性依次经历热电子场发射、可变距离跳跃 (VRH) 和陷阱辅助隧道传导机制。其泄漏和击穿机制受到边缘电场拥挤效应的限制。而对于具有 ArIT 的垂直 GaN-on-Si SBD (ArIT-SBD)，遵循空间电荷限制传导 (SCLC) 模型的低反向偏压下的电子传导受到损伤诱导陷阱的限制注入氮化镓。随着反向偏压增加直至发生击穿，VRH 和 SCLC 主导着 ArIT-SBD 的泄漏机制，这源于在 Si 上生长的 GaN 中的本征陷阱。ArIT-SBD 在低反向偏置和增强的击穿电压性能下快速增长的泄漏归因于注入的 GaN 中损伤诱导陷阱的充电。这封信不仅提供了对垂直 GaN-on-Si SBD 的深入见解，而且还为高压功率器件的注入端接提供了有用的设计指导。