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Reducing Thickness Deviation of W-Shaped Structures in Manufacturing DRAM Products Using RSM and ANN_GA
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2021-05-21 , DOI: 10.1109/tcpmt.2021.3082419
Yungho Leu , Chia-Ming Lin , Wei-Ning Yang

Thickness deviation on a W-shaped structure of word lines in dynamic random access memories (DRAMs) is detrimental to the DRAM manufacturing’s yield rate. The case company has suffered from a low yield rate in their DRAM manufacturing due to large thickness deviations on the W-shaped structures. This article proposed a new approach to find an appropriate setting of manufacturing control factors’ values to decrease the thickness deviation. In the proposed method, we first used the fractional factorial design to select important control factors related to the thickness deviation. We then used the gradient descent method to find a region of control factors that contained a second-order solution to the problem and adopted the response surface method (RSM) to find the second-order solution. However, the second-order RSM was limited by its second-order relationship between the input control factors and the output thickness deviation. To further reduce the thickness deviation, we used an artificial neural network (ANN) to predict the thickness deviation given a set of control factors’ input values. We then used a genetic algorithm (GA) to find a better solution to the problem with the predicted thickness deviations by the ANN. The confirmation experiment showed that the GA had found a better solution than the RSM method. With the proposed GA method, the case company has successfully reduced the thickness deviation from 45.0 to 12.9 Å, saving U.S. $ \$ $ 205 000 per year on their DRAM manufacturing cost.

中文翻译:

使用 RSM 和 ANN_GA 减少制造 DRAM 产品中 W 形结构的厚度偏差

动态随机存取存储器 (DRAM) 中字线 W 形结构的厚度偏差对 DRAM 制造的良率是不利的。由于 W 形结构的厚度偏差较大,该案例公司的 DRAM 制造良率低下。本文提出了一种新方法来寻找合适的制造控制因素值设置以减少厚度偏差。在所提出的方法中,我们首先使用部分因子设计来选择与厚度偏差相关的重要控制因素。然后我们使用梯度下降法寻找包含问题二阶解的控制因素区域,并采用响应面法(RSM)寻找二阶解。然而,二阶 RSM 受限于其输入控制因素与输出厚度偏差之间的二阶关系。为了进一步减少厚度偏差,我们使用人工神经网络 (ANN) 来预测给定一组控制因素输入值的厚度偏差。然后,我们使用遗传算法 (GA) 来找到更好的解决方案来解决 ANN 预测的厚度偏差问题。验证实验表明,GA 找到了比 RSM 方法更好的解决方案。使用建议的 GA 方法,案例公司成功地将厚度偏差从 45.0 降低到 12.9 Å,从而节省了美国 我们使用人工神经网络 (ANN) 来预测给定一组控制因素输入值的厚度偏差。然后,我们使用遗传算法 (GA) 来找到更好的解决方案来解决 ANN 预测的厚度偏差问题。验证实验表明,GA 找到了比 RSM 方法更好的解决方案。使用建议的 GA 方法,案例公司成功地将厚度偏差从 45.0 降低到 12.9 Å,从而节省了美国 我们使用人工神经网络 (ANN) 来预测给定一组控制因素输入值的厚度偏差。然后,我们使用遗传算法 (GA) 来找到更好的解决方案来解决 ANN 预测的厚度偏差问题。确认实验表明,GA 找到了比 RSM 方法更好的解决方案。使用建议的 GA 方法,案例公司成功地将厚度偏差从 45.0 降低到 12.9 Å,从而节省了美国 $ \$ $ 每年 205 000 的 DRAM 制造成本。
更新日期:2021-06-18
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