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Integrating boron arsenide into power devices
Nature Electronics ( IF 34.3 ) Pub Date : 2021-06-17 , DOI: 10.1038/s41928-021-00604-x Samuel Graham , Sukwon Choi
Nature Electronics ( IF 34.3 ) Pub Date : 2021-06-17 , DOI: 10.1038/s41928-021-00604-x Samuel Graham , Sukwon Choi
Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.
中文翻译:
将砷化硼集成到功率器件中
砷化硼可用作氮化镓功率器件中的高导热性冷却基板。
更新日期:2021-06-18
中文翻译:
将砷化硼集成到功率器件中
砷化硼可用作氮化镓功率器件中的高导热性冷却基板。