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High spectro-temporal compression on a nonlinear CMOS-chip
Light: Science & Applications ( IF 19.4 ) Pub Date : 2021-06-18 , DOI: 10.1038/s41377-021-00572-z
Ju Won Choi 1 , Ezgi Sahin 1 , Byoung-Uk Sohn 1 , George F R Chen 1 , Doris K T Ng 2 , Anuradha M Agarwal 3, 4 , Lionel C Kimerling 4, 5 , Dawn T H Tan 1, 2
Affiliation  

Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attosecond science. Here, we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition, we report the first demonstration of on-chip spectral compression, 3.0× spectral compression of 480 fs pulses, importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design, and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride, which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key, on-chip integrated systems for all-optical pulse control.



中文翻译:

非线性 CMOS 芯片上的高光谱时间压缩

光脉冲基本上由它们的时间和光谱特性定义。控制脉冲特性的能力使从业者能够有效地利用它们进行高级计量、高速光通信和阿秒科学。在这里,我们报告使用 13.3 W 的低功率将 5.8 ps 脉冲的 11 倍时间压缩至 0.55 ps。结果伴随着脉冲峰值功率显着增加了 9.4 倍。这些结果代表了迄今为止在互补金属氧化物半导体 (CMOS) 芯片上证明的最强的时间压缩。此外,我们报告了片上频谱压缩的首次演示,480 fs 脉冲的 3.0 倍频谱压缩,重要的是同时保留了脉冲能量。在低功率下实现的强大压缩利用了先进的片上器件设计,以及后端 CMOS 兼容的超富硅氮化物的强非线性特性,它没有双光子吸收,非线性参数比化学计量氮化硅波导大 500 倍。所展示的工作为光脉冲的光谱时间压缩引入了一种重要的新范例,用于全光脉冲控制的交钥匙片上集成系统。

更新日期:2021-06-18
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