Owing to high resolution, reliability, and industrial compatibility, all-photolithography is a promising strategy for industrial manufacture of organic electronics. However, it receives limited success due to the absence of a semiconducting photoresist with high patterning resolution, mobility, and performance stability against photolithography solution processes. Here, we develop a comprehensive semiconducting photoresist with nano-interpenetrating structure. After photolithography, nanostructured cross-linking networks interpenetrate with continuous phases of semiconducting polymers, enabling submicrometer patterning accuracy and compact molecular stacking with high thermodynamic stability. The mobility reaches the highest values of photocrosslinkable organic semiconductors and maintains almost 100% after soaking in developer and stripper for 1000 min. Owing to the comprehensive performance, all-photolithography is achieved, which fabricates organic inverters and high-density transistor arrays with densities up to 1.1 × 10⁵ units cm⁻² and 1 to 4 orders larger than conventional printing processes, opening up a new approach toward manufacturing highly integrated organic circuits and systems.

由于高分辨率、可靠性和工业兼容性，全光刻技术是有机电子工业制造的一种有前途的策略。然而，由于缺乏具有高图案分辨率、迁移率和针对光刻溶液工艺的性能稳定性的半导体光刻胶，它获得的成功有限。在这里，我们开发了一种具有纳米互穿结构的综合半导体光刻胶。光刻后，纳米结构的交联网络与半导体聚合物的连续相相互渗透，实现亚微米图案精度和具有高热力学稳定性的紧凑分子堆叠。在显影剂和剥离剂中浸泡 1000 分钟后，迁移率达到可光交联有机半导体的最高值，并且几乎保持 100%。由于综合性能，实现了全光刻，制造了密度高达1.1×10的有机逆变器和高密度晶体管阵列^{5 个}单位 cm ^-2和比传统印刷工艺大 1 到 4 个数量级，开辟了制造高度集成有机电路和系统的新方法。