This paper presents a tunable active inductor based ultra-low power, low area voltage-controlled oscillator (VCO) in 90 nm CMOS process. In the designed VCO, the modified topology of the active inductor is employed along with tuning capability. The layoutbased simulation has been performed deeming parasitic resistances and capacitances. The designed VCO yields an oscillation frequency ranging from 1.38 GHz to 3.16 GHz with a tuning range of 78.41%, where the tuning voltage is driven from 0.4 V to −0.2 V. The power dissipation varies from 0.062 mW to 0.177 mW, and the VCO provides a differential output power of 8.34 dBm to 3.94 dBm. The phase noise varies from −71 dBc/Hz to −65.4 dBc/Hz, and the Figure of Merit (FoM) has a value of −143.09 dBc/Hz @ 2.79 GHz frequency. The process corner analysis, temperature swept analysis, and Monte Carlo analysis of the proposed VCO had been carried out for the evaluation of its compatibility for diversified environments. Furthermore, the exclusion of the MOS varactor has condensed total silicon area consumption (10.3 μm × 8.5 μm). Finally, the designed VCO's performance parameters have been compared with mentioned designs where it is demonstrated that the designed VCO outdoes the others in most cases along with outstanding outcomes of low power and low silicon area consumption.

本文介绍了一种采用 90 nm CMOS 工艺的基于可调谐有源电感器的超低功耗、小面积压控振荡器 (VCO)。在设计的 VCO 中，采用了改进的有源电感器拓扑结构以及调谐能力。已执行基于布局的模拟，认为存在寄生电阻和电容。设计的 VCO 产生的振荡频率范围为 1.38 GHz 至 3.16 GHz，调谐范围为 78.41%，其中调谐电压从 0.4 V 驱动至 -0.2 V。功耗从 0.062 mW 至 0.177 mW，VCO提供 8.34 dBm 至 3.94 dBm 的差分输出功率。相位噪声从 −71 dBc/Hz 到 −65.4 dBc/Hz 变化，品质因数 (FoM) 值为 −143.09 dBc/Hz @ 2.79 GHz 频率。工艺角点分析、温度扫描分析、已对提议的 VCO 进行了蒙特卡罗分析，以评估其对多种环境的兼容性。此外，排除 MOS 变容器还压缩了总硅面积消耗 (10.3 μm × 8.5 μm)。最后，将所设计的 VCO 的性能参数与上述设计进行了比较，结果表明，所设计的 VCO 在大多数情况下都优于其他 VCO，并且具有低功耗和低硅面积消耗的出色结果。