We present comprehensive modeling of a SiGeSn multi-quantum well laser that has been previously experimentally shown to feature an order of magnitude reduction in the optical pump threshold compared to bulk lasers. We combine experimental material data obtained over the last few years with $k·p$ theory to adapt transport, optical gain, and optical loss models to this material system (drift-diffusion, thermionic emission, gain calculations, free carrier absorption, and intervalence band absorption). Good consistency is obtained with experimental data, and the main mechanisms limiting the laser performance are discussed. In particular, modeling results indicate a low non-radiative lifetime, in the 100 ps range for the investigated material stack, and lower than expected Γ-L energy separation and/or carrier confinement to play a dominant role in the device properties. Moreover, they further indicate that this laser emits in transverse magnetic polarization at higher temperatures due to lower intervalence band absorption losses. To the best of our knowledge, this is the first comprehensive modeling of experimentally realized SiGeSn lasers, taking the wealth of experimental material data accumulated over the past years into account. The methods described in this paper pave the way to predictive modeling of new (Si)GeSn laser device concepts.

中文翻译：

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SiGeSn 量子阱激光器的建模

我们展示了 SiGeSn 多量子阱激光器的综合建模，之前已经通过实验证明，与体激光器相比，该激光器的光泵阈值降低了一个数量级。我们将过去几年获得的实验材料数据与$克·磷$将传输、光增益和光损耗模型应用于该材料系统的理论（漂移扩散、热电子发射、增益计算、自由载流子吸收和间隔带吸收）。与实验数据具有良好的一致性，并讨论了限制激光性能的主要机制。特别是，建模结果表明非辐射寿命低，所研究的材料堆栈在 100 ps 范围内，并且低于预期的 Γ-L 能量分离和/或载流子限制在器件特性中起主导作用。此外，他们进一步表明，由于间隔带吸收损耗较低，该激光器在较高温度下以横向磁极化发射。据我们所知，这是第一次对实验实现的 SiGeSn 激光器进行综合建模，考虑到过去几年积累的大量实验材料数据。本文中描述的方法为新 (Si)GeSn 激光器件概念的预测建模铺平了道路。