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Multifunctional High-Frequency Circuit Capabilities of Ambipolar Carbon Nanotube FETs
IEEE Transactions on Nanotechnology ( IF 2.4 ) Pub Date : 2021-05-21 , DOI: 10.1109/tnano.2021.3082867
Javier N. Ramos-Silva , Anibal Pacheco-Sanchez , Eloy Ramirez-Garcia , David Jimenez

An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase configurable amplifier (PCA) and a frequency configurable amplifier (FCA). The former design involves an in-phase amplifier and an inverting amplifier while the latter design embraces a frequency doubler as well as a distinct inverting amplifier. The specific functionality selection of each of the two HF circuit designs is enabled mainly by the inherent ambipolar feature at a device level. Furthermore, at a circuit level the matching networks are the same regardless the operation mode. In-phase and inverting amplification are enabled in the PCA by switching the gate-to-source voltage ( $V_{\rm GS}$ ) from −0.3 V to 0.9 V while the drain-to-source voltage ( $V_{\rm DS}$ ) remains at 3 V. By designing carefully the matching and stability networks, power gains of $\sim$ 4.5 dB and $\sim$ 6.7 dB at 2.4 GHz for the in-phase and inverting operation mode have been achieved, respectively. The FCA, in its frequency doubler operation mode, exhibits $\sim$ 20 dBc of fundamental-harmonic suppression at 2.4 GHz when an input signal at 1.2 GHz is considered. This frequency doubler functionality is enabled at $V_{\rm GS}={0.3} $ V, whereas at $V_{\rm GS}={0.9}$ V amplification of $\sim$ 4.5 dB is obtained while $V_{\rm DS}$ remains at 3 V in both cases. In both configurable circuits the stabilization and matching networks are the same regardless the bias-chosen operation mode. The circuits performance degradation due to metallic tubes in the device channel is studied as well as the impact of non-ideal inductors in each design. PCA and FCA operation modes are further exploited in high-frequency modulators.

中文翻译:

双极碳纳米管FET的多功能高频电路能力

实验校准的碳纳米管紧凑型晶体管模型已被用于设计两个高频 (HF) 电路,每个电路具有两个不同的功能:相位可配置放大器 (PCA) 和频率可配置放大器 (FCA)。前一种设计涉及一个同相放大器和一个反相放大器,而后一种设计包含一个倍频器和一个独特的反相放大器。两种 HF 电路设计中每一种的特定功能选择主要由设备级别的固有双极特性实现。此外,在电路级别,无论操作模式如何,匹配网络都是相同的。通过切换栅源电压( $V_{\rm GS}$ ) 从 -0.3 V 到 0.9 V 而漏源电压 ( $V_{\rm DS}$ ) 保持在 3 V。通过仔细设计匹配和稳定网络,功率增益为 $\sim$ 4.5 分贝和 $\sim$ 对于同相和反相操作模式,在 2.4 GHz 下分别实现了 6.7 dB。FCA 在其倍频器操作模式下,表现出$\sim$ 当考虑 1.2 GHz 的输入信号时,2.4 GHz 的基波谐波抑制为 20 dBc。此倍频器功能在$V_{\rm GS}={0.3} $ V,而在 $V_{\rm GS}={0.9}$ V放大 $\sim$ 获得 4.5 dB 时 $V_{\rm DS}$在这两种情况下都保持在 3 V。在这两种可配置电路中,稳定和匹配网络是相同的,而不管偏置选择的操作模式如何。研究了由于器件通道中的金属管导致的电路性能下降以及每个设计中非理想电感的影响。PCA 和 FCA 操作模式在高频调制器中得到进一步利用。
更新日期:2021-06-15
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