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Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators
IEEE Photonics Journal ( IF 2.4 ) Pub Date : 2021-05-31 , DOI: 10.1109/jphot.2021.3084943 Yanhua Sha 1 , Jiaye Wu 1 , Ze Tao Xie 1 , H. Y. Fu 2 , Qian Li 1
IEEE Photonics Journal ( IF 2.4 ) Pub Date : 2021-05-31 , DOI: 10.1109/jphot.2021.3084943 Yanhua Sha 1 , Jiaye Wu 1 , Ze Tao Xie 1 , H. Y. Fu 2 , Qian Li 1
Affiliation
We present a systematical comparative research on the modulation performance and the optimization of the multi-slot waveguide modulator at the telecom wavelength of 1.55 μm. It is found that the existence of epsilon-near-zero indium tin oxide slots in modulators can enhance the optical confinement, thus yielding a high extinction ratio (ER) and low insertion loss. Among the designed four types of slot modulators, the single-slot modulator exhibits the widest modulation bandwidth of 78.75 GHz and lowest energy consumption of 1.15 pJ/bit, while the dual-slot one shows the moderate performance. For the more-slot designs, the tri-slot has the advantages of a maximum figure of merit of ∼106, and the quadri-slot one has the highest ER of 1.38 dB/μm. By integrating the multi-slot modulator on the silicon waveguide, the quadri-slot modulator waveguide exhibits broad optical bandwidth of 83 nm from 1479 to 1560 nm and large modulation depth (∼18.3 dB). The performance of four types of slot modulators can be further improved from different aspects by the optimization of their geometric parameters. The results of this work could be useful in the design and selection of high performance on-chip modulators for optical communications and ultrafast data processing.
中文翻译:
基于 Epsilon 近零波导的电光调制器中多槽设计的比较研究
我们对多槽波导调制器在 1.55 μm 电信波长下的调制性能和优化进行了系统的比较研究。发现调制器中ε接近零的氧化铟锡槽的存在可以增强光限制,从而产生高消光比(ER)和低插入损耗。在设计的四种时隙调制器中,单时隙调制器的调制带宽最宽,为 78.75 GHz,能耗最低,为 1.15 pJ/bit,而双时隙调制器的性能中等。对于多槽设计,三槽的优点是最大品质因数约为 106,四槽的最高 ER 为 1.38 dB/μm。通过在硅波导上集成多槽调制器,四槽调制器波导具有从 1479 到 1560 nm 的 83 nm 宽光带宽和大调制深度(~18.3 dB)。四种时隙调制器的性能可以通过优化其几何参数从不同方面得到进一步提升。这项工作的结果可用于设计和选择用于光通信和超快数据处理的高性能片上调制器。
更新日期:2021-06-15
中文翻译:
基于 Epsilon 近零波导的电光调制器中多槽设计的比较研究
我们对多槽波导调制器在 1.55 μm 电信波长下的调制性能和优化进行了系统的比较研究。发现调制器中ε接近零的氧化铟锡槽的存在可以增强光限制,从而产生高消光比(ER)和低插入损耗。在设计的四种时隙调制器中,单时隙调制器的调制带宽最宽,为 78.75 GHz,能耗最低,为 1.15 pJ/bit,而双时隙调制器的性能中等。对于多槽设计,三槽的优点是最大品质因数约为 106,四槽的最高 ER 为 1.38 dB/μm。通过在硅波导上集成多槽调制器,四槽调制器波导具有从 1479 到 1560 nm 的 83 nm 宽光带宽和大调制深度(~18.3 dB)。四种时隙调制器的性能可以通过优化其几何参数从不同方面得到进一步提升。这项工作的结果可用于设计和选择用于光通信和超快数据处理的高性能片上调制器。