The structure–property relationship of PdSe₂ is discussed, i.e., layer number vs. tunable bandgap, pentagonal structure vs. anisotropy-based polarized light detection.

The synthesis approaches of PdSe₂ are thoroughly compared, including bottom-up methods such as chemical vapor transport for bulk crystals, chemical vapor deposition for thin films and single-crystal domains, selenization of Pd films. Besides, top-down strategies are discussed, covering the mechanical exfoliation of bulk crystals, plasma thinning, and vacuum annealing as well as phase transition.

The emerging devices of PdSe₂ and its van der Waals heterostructures have been delivered such as metal/semiconductor contact, Schottky junction transistors, field-effect transistors, photodetectors, p–n junction-based rectifiers, polarized light detector, and infrared image sensors.

Future opportunities of PdSe₂-based van der Waals heterostructures are given including logic gate-based digital circuits, RF-integrated circuits, Internet of Things, and theoretical calculation as well as big data for materials science.

_{讨论了 PdSe 2}的结构-性质关系，即层数与可调带隙、五边形结构与基于各向异性的偏振光检测。

_{比较了PdSe 2}的合成方法，包括自下而上的方法，如块状晶体的化学气相传输，薄膜和单晶畴的化学气相沉积，Pd薄膜的硒化。此外，还讨论了自上而下的策略，涵盖块状晶体的机械剥离、等离子体减薄、真空退火以及相变。

_{PdSe 2}及其范德瓦尔斯异质结构的新兴器件已经交付，例如金属/半导体接触、肖特基结晶体管、场效应晶体管、光电探测器、基于p - n结的整流器、偏振光探测器和红外图像传感器。

给出了基于PdSe ₂范德瓦尔斯异质结构的未来机会，包括基于逻辑门的数字电路、射频集成电路、物联网、理论计算以及材料科学的大数据。