In this paper, new memristor-less meminductor emulators have been proposed using voltage differencing transconductance amplifier (VDTA), current differencing buffered amplifier (CDBA) and a grounded capacitor. The proposed decremental/incremental meminductor emulators have been realized in both grounded and floating types of configurations. In the proposed meminductor emulators, analog multiplier, memristor and passive resistors are not used which result in simpler configurations. The pinched hysteresis loops are maintained up to 2MHz for both decremental and incremental configurations of meminductor emulators. The behaviors of decremental and incremental meminductor emulators have been analyzed after applying input pulses. The obtained results verify the performances as decremental and incremental meminductor emulators. The simulation results have been obtained using Mentor Graphics Eldo simulation tool with 180nm CMOS technology parameters. To verify the performances of the proposed meminductor emulators, adaptive learning circuit and chaotic oscillator have been designed. The performances of the proposed meminductor emulators are compared with other meminductor emulators reported in the literature.

中文翻译：

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使用 VDTA 和 CDBA 的新型接地和浮动无忆阻器忆阻器仿真器

在本文中，提出了使用电压差跨导放大器 (VDTA)、电流差缓冲放大器 (CDBA) 和接地电容器的新型无忆阻器存储器仿真器。所提出的递减/递增meminductor仿真器已经在接地和浮动类型的配置中实现。在所提议的忆电感器仿真器中，没有使用模拟乘法器、忆阻器和无源电阻器，这导致配置更简单。被夹住的磁滞回线保持在 2MHz 用于 meminductor 仿真器的递减和递增配置。在施加输入脉冲后，分析了递减和递增存储器仿真器的行为。获得的结果验证了作为递减和递增meminductor 仿真器的性能。仿真结果是使用 Mentor Graphics Eldo 仿真工具与 180纳米 CMOS 技术参数。为了验证所提出的meminductor仿真器的性能，设计了自适应学习电路和混沌振荡器。将所提出的 meminductor 仿真器的性能与文献中报道的其他 meminductor 仿真器进行了比较。