Despite having higher carrier mobilities and absorption coefficients of germanium (Ge) than those of silicon (Si), there has been less focus on Ge-based solar cells due to the low bandgap and high cost of Ge wafer as well as the requirement of its high-purity level. Currently, the availability of high-purity Ge (HPGe), the low-cost wafer slicing method, and proper design guidelines make it possible to design HPGe-based solar cells. Accordingly, in this article, we have designed and simulated a novel n-CdS/p-HPGe/p⁺-BaSi₂ based npp⁺ double-heterojunction solar cell (DHJSC), where HPGe, cadmium sulfide (CdS), and orthorhombic barium disilicide (β-BaSi₂) have been used as the absorber, window, and back-surface field (BSF) layers, respectively. Using the solar cell capacitance simulator (SCAPS-1D), the effects of different physical parameters such as the thickness, doping, and defect densities, band offsets, and temperature on the photovoltaic (PV) parameters of the designed solar cells have been investigated systematically. This article renders the optimized PV parameters to improve the device performance with the highest power conversion efficiency (PCE) of ∼45.65% with a high open-circuit voltage of 1.16 V owing to the high built-in voltage of 1.7 V for the n-CdS/p-HPGe/p⁺-BaSi₂ solar cells. This efficiency is almost consistent with the detailed balance limit for DHJSCs.

尽管锗 (Ge) 的载流子迁移率和吸收系数高于硅 (Si)，但由于 Ge 晶片的低带隙和高成本以及对其高纯度水平。目前，高纯度锗 (HPGe) 的可用性、低成本的晶圆切片方法和适当的设计指南使设计基于 HPGe 的太阳能电池成为可能。因此，在本文中，我们已经设计和模拟的新颖Ñ -CdS / p -HPGe / p ⁺ -BaSi ₂基于NPP ⁺双异质结太阳能电池（DHJSC），其中高纯锗，硫化镉（CdS）和斜方晶系钡二硅化物（β-BaSi ₂) 已分别用作吸收器、窗口和背面场 (BSF) 层。使用太阳能电池电容模拟器 (SCAPS-1D)，系统地研究了厚度、掺杂和缺陷密度、带偏移和温度等不同物理参数对设计太阳能电池的光伏 (PV) 参数的影响. 本文渲染优化的 PV 参数以提高器件性能，最高功率转换效率 (PCE) 约为 45.65%，由于n - 的内置电压为 1.7 V，开路电压高达 1.16 V。CdS/ p -HPGe/ p ⁺ -BaSi ₂太阳能电池。这种效率几乎与 DHJSC 的详细平衡限制一致。